Current steering element formation for memory arrays

摘要

The present invention is a method for forming a self-aligned, three dimensional structure in a crystalline surface and then converting that self-aligned, three dimensional structure into an array of diodes or current switches so as to minimize reverse leakage in the resulting array.

主权项

1. A method of forming a memory array comprising the steps of:
a. patterning and etching to form a self-aligned, three dimensional structure in a crystalline surface and, b. converting that self-aligned, three dimensional structure into an array of current controlling devices by implanting and annealing.