TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, SEMICONDUCTOR UNIT, METHOD OF MANUFACTURING THE SEMICONDUCTOR UNIT, DISPLAY, AND ELECTRONIC APPARATUS

摘要

A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.

主权项

1. A transistor comprising:
an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and an insulating film covering the gate electrode and the oxide semiconductor film, wherein infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.