SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which controls a threshold value; and provide a semiconductor device which can inhibit deterioration in electrical characteristics, which notably occurs in association with microfabrication.SOLUTION: A semiconductor device comprises: a first semiconductor film; a source electrode and a drain electrode, which electrically contact the first semiconductor film; a gate insulation film; and a gate electrode which contacts the gate insulation film. The gate insulation film includes a first insulation film and a trap film, and a charge trap level at a boundary face between the first insulation film and the trap film, or inside the trap film is caused to trap charges.