| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a defect correction method and a defect correction apparatus capable of accurately comprehending an endpoint of processing, through suppressing side etching or glass overetching to the minimum by accurately discerning an etching endpoint in correcting a black defect of a photomask defect correction.SOLUTION: A defect correction method includes, when irradiating a black defect part made of an excess film remaining in a surface of the photomask substrate with focused ion beams or electron beams while blowing assist gas thereto so as to remove the black defect part by gas-assisted etching: a measurement process of measuring intensity of reflection light from a photomask substrate concurrent with the etching, and plotting the intensity of the reflection light to elapsed time; and a determination process of determining a completion of etching removal at the defect part by increase/decrease tendency of the reflection light intensity obtained at the measurement process. The defect correction method appropriately selects incident, reflection, transmission angles and wavelength of the laser beams.</p> |
