发明名称 SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYZER AND SEMICONDUCTOR ELEMENT HEAT GENERATION ANALYSIS METHOD
摘要 <p>PROBLEM TO BE SOLVED: To solve problems that portions near a defective portion are damaged and the defective portion cannot be identified if a high voltage is applied to an inspection target so as to identify the defective portion that does not occur until the high voltage is applied, and that the inspection target is damaged because of lack of a pulse generation source to which an appropriate high voltage is applied.SOLUTION: A semiconductor element heat generation analyzer operates synchronously with signals from a pulse generation unit that generates a plurality of pulses each at a pulse height equal to or larger than 1000 V and a pulse width equal to or smaller than 1 msec, an infrared detector, and a lock-in control unit.</p>
申请公布号 JP2015034817(A) 申请公布日期 2015.02.19
申请号 JP20140136465 申请日期 2014.07.02
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAGAE AKEMI;NAKAO YUKIYASU
分类号 G01N25/72;G01R31/26 主分类号 G01N25/72
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