发明名称 |
PHOTOLITHOGRAPHIC METHODS OF PRODUCING STRUCTURES IN RADIATION-EMITTING SEMICONDUCTOR COMPONENTS |
摘要 |
A photolithographic method which produces a structure in a radiation-emitting semiconductor component by providing a semiconductor wafer having a semiconductor layer sequence, applying a first photoresist layer to the semiconductor wafer, providing a mask, and arranging the mask relative to the coated semiconductor wafer, exposing the first photoresist layer and imaging the mask in the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at another position different from a first position and again exposing the first photoresist layer and imaging the mask in the first photoresist layer or applying a second photoresist layer to the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at a second position, and exposing the second photoresist layer and imaging the mask in the second photoresist layer, forming a patterned photoresist layer and patterning the semiconductor wafer. |
申请公布号 |
US2015050765(A1) |
申请公布日期 |
2015.02.19 |
申请号 |
US201414460856 |
申请日期 |
2014.08.15 |
申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
Böhm Bernd;Hoibl Sebastian |
分类号 |
H01L21/033;H01L33/00 |
主分类号 |
H01L21/033 |
代理机构 |
|
代理人 |
|
主权项 |
1. A photolithographic method of producing a structure in a radiation-emitting semiconductor component comprising:
providing a semiconductor wafer comprising a semiconductor layer sequence to form the radiation-emitting semiconductor component, applying a first photoresist layer to the semiconductor wafer, providing a mask comprising a plurality of mask elements, arranging the mask relative to the coated semiconductor wafer at a first position, exposing the first photoresist layer and imaging the mask in the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at a second position different from the first position, and again exposing the first photoresist layer and imaging the mask in the first photoresist layer or applying a second photoresist layer to the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at a second position different from the first position, and exposing the second photoresist layer and imaging the mask in the second photoresist layer, forming a patterned photoresist layer and patterning the semiconductor wafer by the patterned photoresist layer, wherein a plurality of structure elements are formed at the semiconductor wafer, and a greatest distance between the structure elements is less than a greatest distance between the mask elements, and singulating the semiconductor wafer into a plurality of radiation-emitting semiconductor components each having a structure comprising a plurality of structure elements. |
地址 |
Regensburg DE |