| 发明名称 |
Integrated Circuit with First and Second Switching Devices, Half Bridge Circuit and Method of Manufacturing |
| 摘要 |
An integrated circuit includes a first switching device including a first semiconductor region in a first section of a semiconductor portion and a second switching device including a second semiconductor region in a second section of the semiconductor portion. The first and second sections as well as electrode structures of the first and second switching devices outside the semiconductor portion are arranged along a vertical axis perpendicular to a first surface of the semiconductor portion. |
| 申请公布号 |
US2015048420(A1) |
申请公布日期 |
2015.02.19 |
| 申请号 |
US201313968505 |
申请日期 |
2013.08.16 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Léomant Sylvain;Vielemeyer Martin |
| 分类号 |
H01L27/088;H01L21/02;H01L29/778 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit comprising:
a first switching device comprising a first semiconductor region in a first section of a semiconductor portion; and a second switching device comprising a second semiconductor region in a second section of the semiconductor portion, wherein the first and second sections and electrode structures of the first and second switching devices outside the semiconductor portion are arranged along a vertical axis perpendicular to a first surface of the semiconductor portion. |
| 地址 |
Villach AT |
