SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME

摘要

A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer. Accordingly, a driving voltage of the semiconductor device provided with the n-type TFT and the p-type TFT can be reduced.

主权项

1. A semiconductor device comprising an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate, wherein
the first thin film transistor includes: a first semiconductor layer having a channel region, a source region, and a drain region; a gate electrode disposed to overlap the channel region; and a gate insulating film disposed between the semiconductor layer and the gate electrode, the second thin film transistor includes: a second semiconductor layer having a channel region, a source region, and a drain region; a gate electrode disposed to overlap the channel region; and a gate insulating film disposed between the semiconductor layer and the gate electrode, the first and the second semiconductor layers are formed from one and the same film, each of the first and the second semiconductor layers has a slope portion positioned in the periphery and a main portion which is a portion excluding the slope portion, and a p-type impurity is introduced into the entire of the slope portion of the first semiconductor layer and only a part of the slope portion of the second semiconductor layer with higher density than the main portion of the first semiconductor layer and the main portion of the second semiconductor layer.