THIN-FILM TRANSISTOR ARRAY SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR ARRAY SUBSTRATE

摘要

A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.

主权项

1. A method of manufacturing a thin film transistor (TFT) array substrate, comprising:
forming an active layer over a substrate; forming a first insulating layer over the substrate to cover the active layer; forming a first gate electrode over the first insulating layer, wherein the first gate electrode is formed substantially directly above at least a portion of the active layer; doping the active layer with ion impurities; forming a second insulating layer over the first insulating layer to cover the first gate electrode; performing an annealing process on the active layer; forming a lower electrode of a capacitor over the second insulating layer; forming a third insulating layer over the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant greater than those of the first and second insulating layers; and forming an upper electrode of the capacitor over the third insulating layer.