| 发明名称 |
TRANSPARENT COMPOUND SEMICONDUCTOR AND PRODUCTION METHOD THEREFOR |
| 摘要 |
The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of Ba1−XLaXSnO3 (0<x<0.1) and has a charge mobility of at least 10 cm2/V·sec. |
| 申请公布号 |
US2015048282(A1) |
申请公布日期 |
2015.02.19 |
| 申请号 |
US201314390215 |
申请日期 |
2013.04.05 |
| 申请人 |
RFTRON CO., LTD. |
发明人 |
Char Kookrin;Ihm Jisoon |
| 分类号 |
H01L29/24;H01L21/02 |
主分类号 |
H01L29/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transparent compound semiconductor fabricated by reacting a Ba compound, an La compound, and an Sn compound, and having a composition of Ba1−XLaXSnO3 (0<x<0.1) and a charge mobility of at least 10 cm2/V·sec. |
| 地址 |
Seoul KR |
