| 摘要 |
<p>Disclosed is a preparation method for a transparent conductive oxide film layer, comprising: forming a transparent conductive oxide film layer on a substrate; conducting a first annealing treatment on the transparent conductive oxide film layer; and conducting a second annealing treatment on the transparent conductive oxide film layer after the first annealing treatment. Since the second annealing treatment for the transparent conductive oxide film layer is added, excessive oxygen atoms in the transparent conductive oxide film layer, residual oxygen atoms on the surface of the film layer and other foreign gas atoms are released into the annealing environment, so that the sheet resistance of the transparent conductive oxide film layer can be reduced, and the conductivity of the transparent conductive oxide film layer can be improved. In addition, the second annealing treatment also enables excessive low-valence oxides in the transparent conductive oxide film layer to be fully oxidized, so as to form oxides with an ideal proportional chemical structure, thereby improving the light transmittance of the transparent conductive oxide film layer.</p> |
