| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows obtaining a stable threshold value.SOLUTION: A semiconductor device includes a structure, an insulating film, a control electrode, a first electrode, and a second electrode. The structure has a first surface and includes a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region, and a first-conductivity-type third semiconductor region. The structure has a portion in which the first semiconductor region, the second semiconductor region, and the third semiconductor region are aligned in this order in a first direction along the first surface. The insulating film is provided on the first surface. The control electrode is provided on the insulating film. The first electrode is electrically connected to the third semiconductor region. The second electrode is electrically connected to the first semiconductor region. The insulating film includes a charge trap region that captures charges. |
