METHOD OF PRODUCING SEMICONDUCTOR NANOWIRE AND METHOD OF PRODUCING OPTICAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor nanowire which can form a semiconductor nanowire of a group III-V compound semiconductor at low costs and wide intervals.SOLUTION: A method of producing a semiconductor nanowire 50 includes a step of forming an insulator film 20 having an opening on a semiconductor substrate 10 composed of a group III-V compound semiconductor, a step of forming a metal film on the semiconductor substrate 10 in the opening of the insulator film 20, a step of forming, by heating, a fine particle 40 serving as a metal catalyst with the metal element contained in the metal film and the group III element contained in the semiconductor substrate 10 and a step of growing a group III-V compound semiconductor in a region where the fine particle 40 serving as a metal catalyst is formed by supplying a raw gas containing a group III element, a raw gas containing a group V element and a gas containing a halogen.