| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent heat radiation performance; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a metal substrate 10 having regions of one part and the other parts which are electrically separated from one another; an insulating substrate 12 which is provided on the metal substrate 10 and has a concavity 18 at a position corresponding to the region 38e of the one part; a semiconductor chip 14 mounted on the region 38e of the one part of the metal substrate 10 in the concavity 18; via interconnections 34 which are provided on the insulating substrate 12 and electrically connect a top face of the insulating substrate 12 and the regions 38d, 38f of the other parts of the metal substrate 10; and wires 32 which are provided between the top face side of the insulating substrate 12 and the semiconductor chip 14 and connects potential of the semiconductor chip 14 to the via interconnections 34.</p> |
