| 发明名称 |
METALLIC MATERIAL FOR ELECTRONIC COMPONENTS, AND CONNECTOR TERMINALS, CONNECTORS AND ELECTRONIC COMPONENTS USING SAME |
| 摘要 |
The present invention provides a metallic material for electronic components having a low degree of whisker formation and a high durability, and connector terminals, connectors and electronic components using the metallic material. The metallic material for electronic components includes: a base material; on the base material, an lower layer constituted with one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co and Cu; on the lower layer, an upper layer constituted with an alloy composed of one or both of Sn and In (constituent elements A) and one or two or more of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir (constituent elements B), wherein the thickness of the lower layer is 0.05 μm or more; the thickness of the upper layer is 0.005 μm or more and 0.6 μm or less; and in the upper layer, the relation between the ratio, the constituent elements A/(the constituent elements A+the constituent elements B) [mass %] (hereinafter, referred to as the proportion of Sn+In) and the plating thickness [μm] is given by;plating thickness≦8.2×(proportion of Sn+In)−0.66 [herein, (the proportion of Sn+In)≧10 mass %]. |
| 申请公布号 |
US2015047879(A1) |
申请公布日期 |
2015.02.19 |
| 申请号 |
US201314387115 |
申请日期 |
2013.01.25 |
| 申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
Shibuya Yoshitaka;Fukamachi Kazuhiko;Kodama Atsushi |
| 分类号 |
H01B1/02;B32B15/01;H01R4/58 |
主分类号 |
H01B1/02 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A metallic material for electronic components excellent in low degree of whisker formation, low degree of insertion/extraction force, fine sliding wear resistance and gas corrosion resistance, comprising:
a base material; on the base material, a lower layer constituted with one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co and Cu; and on the lower layer, an upper layer constituted with an alloy of one or both of Sn and In (constituent elements A) and one or two or more selected from Ag, Au, Pt, Pd, Ru, Rh, Os and Ir (constituent elements B), wherein the thickness of the lower layer is 0.05 μm or more; the thickness of the upper layer is 0.005 μm or more and 0.6 μm or less; and in the upper layer, the relation between the constituent element(s) A/(the constituent element(s) A+the constituent element(s) B) [mass %] (hereinafter, referred to as the proportion of Sn+In) and the plating thickness [μm] is given by
plating thickness≦8.2×(proportion of Sn+In)−0.66 [here, (proportion of Sn+In)≧10 mass %]. |
| 地址 |
TOKYO JP |
