THERMAL TREATMENT DEVICE AND FILM FORMATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To properly perform thermal treatment of a substrate while achieving a small supply amount of an inactive gas which is supplied when the thermal treatment of the substrate is performed.SOLUTION: A first thermal treatment device 30 includes: a heating plate 120 which holds a wafer W and performs thermal treatment; a lid 140 which is provided above the heating plate 120 and is integrated with the heating plate 120 to form a thermal treatment chamber K in which the wafer W is housed and the thermal treatment is performed to the wafer W; a gas supply mechanism 150 which supplies an inactive gas to the thermal treatment chamber K; a decompression mechanism 160 which decompresses the atmosphere in the thermal treatment chamber K to a predetermined degree of vacuum; and a seal material 141 which is annularly provided between an upper surface of the heating plate 120 and a lower surface of the lid 140 and is used for maintaining the airtightness in the thermal treatment chamber K.