| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor optical device in which a distortion amount of an active layer is reduced with high accuracy.SOLUTION: A semiconductor optical device according to the present embodiment is a semiconductor device including a substrate and an active layer, and the active layer includes a first luminescent layer and a second luminescent layer having a photoluminescence wavelength different form that of the first luminescent layer. The second luminescent layer has distortion in an opposite direction to distortion of the first luminescence layer with respect to the substrate. When an accumulated distortion amount of the first luminescence layer isαand an accumulated distortion amount of the second luminescent layer isβ, a relation represented as |α|>|α+β| is satisfied, and the first and second luminescence layers are composed of ternary alloys of group III-V semiconductors.</p> |
