ADHESION LAYER FOR THROUGH SILICON VIA METALLIZATION

摘要

To achieve the foregoing and in accordance with the purpose of the present invention, a method for forming copper filled through silicon via features in a silicon wafer is provided. Through silicon vias are etched in the wafer. An insulation layer is formed within the through silicon vias. A barrier layer is formed within the through silicon vias. An oxide free silicon, germanium, or SiGe adhesion layer is deposited over the barrier layer. A seed layer is deposited over the adhesion layer then the wafers is annealed. The features are filled with copper or copper alloy. The stack is annealed.

主权项

1. A method for forming copper filled through silicon via features in a silicon wafer, comprising:
etching through silicon vias in the wafer; forming an insulation layer within the through silicon vias; forming a barrier layer within the through silicon vias; depositing an oxide free silicon, germanium, or SiGe adhesion layer over the barrier layer; depositing a seed layer over the adhesion layer; annealing the stack; filling the features with copper or copper alloy; and annealing the stack.