| 主权项 |
1. A method for manufacturing electronic devices, comprising:
providing a substrate having a first surface; providing an electronic device having conductive bumps on at least one surface thereof; mounting the conductive bumps located on at least one surface of the electronic device to the first surface of the substrate so as to form an integrated unit, wherein a pitch between the conductive bumps is less than 100 micrometers, a gap between the electronic device and the substrate is less than 50 micrometers; applying an capillary underfill to multiple sides of the electronic device, so that the capillary underfill creeps along and fills the gap between the electronic device and the substrate, forming a protection for the conductive bumps; placing the integrated unit into a processing chamber; raising the temperature in the processing chamber to a first predetermined temperature; pre-adjusting the pressure in the processing chamber; raising the pressure in the processing chamber to a second predetermined pressure higher than 1 atm, and maintaining the second predetermined pressure for a predetermined time period; and adjusting the temperature in the processing chamber to a second predetermined temperature, wherein the pre-adjusting the pressure in the processing chamber comprises steps of:
(a) reducing the pressure in the processing chamber to a first predetermined pressure of vacuum pressure, and maintaining the first predetermined pressure for a predetermined time period; and(b) raising the pressure in the processing chamber from the first predetermined pressure to a first return pressure, wherein the first return pressure≦1 atm, or the first return pressure≧1 atm,wherein the steps (a) to (b) are carried out one or more times, and the second predetermined pressure is higher than the first return pressure. |
