| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for improving at least either of etching durability and line boundary roughness of a photoresist layer having a surface in a patterned product wafer.SOLUTION: The method includes the steps of: (a) exposing a photoresist layer to a first treatment gas that is at least one gas selected from a group consisting of trimethyl aluminum gas, titanium tetrachloride gas, and diethyl zinc gas; (b) irradiating the photoresist layer and the first treatment gas with laser light to implant the first treatment gas into the photoresist layer, where a surface temperature of the photoresist layer is increased to a range from 300°C to 500°C with +/-5°C temperature uniformity; (c) removing residual first treatment gas from a periphery of the photoresist layer; (d) exposing the photoresist layer to a second treatment gas containing HO; and (e) irradiating the photoresist layer and the second treatment gas with laser light to implant HO into the photoresist layer. |
