| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a laminated wafer having a high gettering ability.SOLUTION: A method for manufacturing a laminated wafer comprises: a plasma producing step for producing plasma of gas containing a predetermined element; an ion-applying step for applying a pulse voltage to a monocrystalline silicon wafer 11 for an active layer to cast the ions 13 of the predetermined element in the produced plasma on a surface 11A of the wafer 11, thereby forming a quality-modified layer 14 having the predetermined element dissolved therein in the surface of the wafer 11 exposed to the ions; a dielectric film-forming step for forming a dielectric film 15 in a surface of a monocrystalline silicon wafer 12 for a support substrate; and a wafer laminating step for laminating, through the dielectric film 15, the wafer 12 to the surface of the wafer 11 on the side of the quality-modified layer 14.</p> |
