发明名称 METHOD OF ELECTROCHEMICALLY PREPARING SILICON FILM
摘要 A method of preparing a silicon thin film, silicon thin film prepared using the method, and an electronic device including the silicon thin film are provided. The method includes applying an oxidized silicon element solution to a substrate and sintering the silicon oxide film to prepare a compact silicon oxide thin film, electrochemically reducing the silicon oxide thin film to form a porous silicon film, and re-sintering the porous silicon film. Therefore, the silicon thin film used in semiconductors, solar cells, secondary batteries and the like can be easily prepared at a low cost with a smaller number of processes than the conventional methods, and thus price competitiveness of products can be enhanced.
申请公布号 US2015050816(A1) 申请公布日期 2015.02.19
申请号 US201414463584 申请日期 2014.08.19
申请人 Korea Atomic Energy Research Institute 发明人 Bae Sang Eun;Kim Jong-Yun;Yeon Jei-Won;Park Tae-Hong;Song Kyuseok;Kim Dae Hyeon;Cho Young Hwan;Park Yong Joon;Ha Yeong-Keong
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of preparing a silicon thin film, the method comprising: providing a silicon oxide film over a substrate; and electrochemically reducing silicon oxide contained in the silicon oxide film in a liquid electrolyte to form a porous film.
地址 Daejeon KR