METHOD FOR PREVENTING PHOTORESIST CORNER ROUNDING EFFECTS

摘要

A method for ameliorating corner rounding effects in a photolithographic process is provided. A semiconductor workpiece having an active device region is provided, and a photoresist layer is formed over the semiconductor workpiece. A mask is provided for patterning for the photoresist layer, wherein the mask comprises pattern having a sharp corner associated with the active device region. The sharp corner is separated from the active device region by a first distance in a first direction and a second distance in a second direction, wherein the first distance meets a minimum criteria for the photolithographic process, and wherein the second distance is greater than the first distance. The photoresist layer is then exposed to a radiation source, and the radiation source patterns the photoresist layer through the mask, defining an exposure region on the semiconductor workpiece having a rounded corner associated with the sharp corner. Accordingly, the second distance generally prevents the rounded corner of the exposure region from overlapping the active device region.

主权项

1. A method for ameliorating corner rounding effects in a photolithographic process, the method comprising:
providing a semiconductor workpiece having an active device region defined thereon; forming a photoresist layer over the semiconductor workpiece; providing a mask for patterning for the photoresist layer, wherein the mask comprises pattern having a sharp corner associated with the active device region, and wherein the sharp corner is separated from the active device region by a first distance in a first direction and a second distance in a second direction, wherein the first distance meets a minimum criteria for the photolithographic process, and wherein the second distance is greater than the first distance; and exposing the photoresist layer to a radiation source, wherein the radiation source patterns the photoresist layer through the mask, therein defining an exposure region on the semiconductor workpiece having a rounded corner associated with the sharp corner, and wherein the second distance generally prevents the rounded corner of the exposure region from overlapping the active device region.