发明名称 |
PHASE CHANGE MEMORY WORD LINE DRIVER |
摘要 |
A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby. |
申请公布号 |
US2015049543(A1) |
申请公布日期 |
2015.02.19 |
申请号 |
US201414530798 |
申请日期 |
2014.11.02 |
申请人 |
CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. |
发明人 |
PYEON Hong Beom |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for improving word line response comprising:
generating a variable substrate bias; applying the variable substrate bias to a word line driver in a selected block of a memory during a write operation; applying a bias of Vss to word line drivers in the remaining blocks of the memory; and modifying a variable substrate bias of the word line driver depending on a trim value. |
地址 |
OTTAWA CA |