发明名称 |
TUNNEL FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND SWITCH ELEMENT |
摘要 |
A tunnel field-effect transistor (TFET) is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting p-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. Alternatively, the tunnel field-effect transistor is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting n-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. The nano wire is configured from a first region and a second region. For instance, the first region is intermittently doped with a p-type dopant, and the second region is doped with an n-type dopant. |
申请公布号 |
WO2015022777(A1) |
申请公布日期 |
2015.02.19 |
申请号 |
WO2014JP04175 |
申请日期 |
2014.08.12 |
申请人 |
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
FUKUI, TAKASHI;TOMIOKA, KATSUHIRO |
分类号 |
H01L21/336;B82Y30/00;B82Y40/00;H01L21/28;H01L29/06;H01L29/417;H01L29/66;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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