SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

Provided are a semiconductor device and a manufacturing method therefor. An example method comprises: forming a sacrificial gate stack on a substrate (100); forming a gate side wall (106) on a side wall of the sacrificial gate stack; forming an interlayer dielectric layer (108) on the substrate (100), and planarizing same to expose the sacrificial gate stack; partially etching back the sacrificial gate stack to form an opening; expanding the obtained opening so that the opening is in a shape of gradually increasing from a side near the substrate (100) to a side away from the substrate (100); and removing the remaining sacrificial gate stack and forming a gate stack on the inner side of the gate side wall (106).