| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which has high luminance and high luminous efficiency; and provide a manufacturing method of the semiconductor light emitting element.SOLUTION: A semiconductor light emitting element manufacturing method comprises the steps of: forming a mask layer 19 composed of mask parts 19A on a surface of an n-type semiconductor layer 11 in a semiconductor structure layer 14; performing plasma irradiation by an inert gas on the exposed surface 11A of the n-type semiconductor layer and subsequently removing the mask layer by using an organic solvent thereby to make a part on which plasma irradiation is not performed by the mask part be an etching easy part and the plasma irradiated part be an etching difficult part; and subsequently forming by wet etching, an irregular structure surface composed of a plurality of projections 20 which are arranged in accordance with an arrangement form of the mask parts and which are derived from a crystal structure. |
