| 主权项 |
1. A silicon-based electro-optical device, comprising:
structure in which at least one of a first silicon semiconductor layer doped to have a first conductive type and a second silicon semiconductor layer doped to have a second conductive type is stacked, wherein, in an SIS junction in which the relatively thin dielectric layer is formed on an interface between the stacked first silicon semiconductor layer and the second silicon semiconductor layer, a free carrier concentration working on an optical signal electric field is modulated as free carriers are accumulated, removed, or inverted at both sides of a relatively thin dielectric layer by electrical signals from electric terminals connected to the first and second silicon semiconductor layer, and in a region in which the first and second silicon semiconductor layers having the first and second conductive types are stacked, a concavoconvex structure including a Si1-xGex (x=0.01 to 0.9) layer is formed on a surface of the first silicon semiconductor layer, the relatively thin dielectric layer is formed on the concavoconvex structure, and the second silicon semiconductor layer having the second conductive type is further stacked. |
