发明名称 Meander Line Resistor Structure
摘要 A system comprises a first transistor comprising a first active region and a second active region, a first resistor comprising a plurality of first vias connected in series, wherein the first resistor is over the first active region, a second resistor comprising a plurality of second vias connected in series, wherein the second resistor is over the second active region, a second transistor comprising a third active region and a fourth active region, a capacitor having a terminal electrically coupled to the fourth active region and a bit line electrically coupled to the third active region.
申请公布号 US2015048432(A1) 申请公布日期 2015.02.19
申请号 US201414528734 申请日期 2014.10.30
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Yen Hsiao-Tsung;Lin Yu-Ling
分类号 H01L27/108;H01L23/528;H01L23/522;H01L27/06;H01L29/06 主分类号 H01L27/108
代理机构 代理人
主权项 1. A system comprising: a first interlayer dielectric layer over a substrate; a second interlayer dielectric layer over the first interlayer dielectric layer; a third interlayer dielectric layer over the second interlayer dielectric layer; a first metallization layer over the third interlayer dielectric layer; a first resistor over a first active region of the substrate; a second resistor over a second active region of the substrate; and an interconnector in the first metallization layer and coupled between the first resistor and the second resistor; and a second transistor comprising a third active region and a fourth active region; and a capacitor comprising a first capacitor plate in the second interlayer dielectric layer and a second capacitor plate.
地址 Hsin-Chu TW