发明名称 |
LIGHT EMITTING ELEMENT MANUFACTURING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a light emitting element which has a configuration capable of achieving length equalization of a resonator.SOLUTION: A light emitting element manufacturing method comprises the steps of: (a) forming a mask layer 12 for selective growth on a light emitting element manufacturing substrate 11 in a region 14 outside an element formation region 13; subsequently (b) forming on the element formation region 13, a laminate structure 20 in which a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 are stacked; subsequently (c) forming a second electrode 32 and a second light reflection layer 42 on the second compound semiconductor layer 22; subsequently (d) fixing the second light reflection layer 42 to a support substrate 26; subsequently (e) removing the light emitting element manufacturing substrate 11 to expose a first surface of the first compound semiconductor layer and the mask layer 12; and subsequently (f) forming a first light reflection layer 41 and a first electrode 31 on the first surface of the first compound semiconductor layer 21.</p> |
申请公布号 |
JP2015035543(A) |
申请公布日期 |
2015.02.19 |
申请号 |
JP20130166572 |
申请日期 |
2013.08.09 |
申请人 |
SONY CORP |
发明人 |
KAZETAGAWA MUNEYUKI;HAMAGUCHI TATSUFUMI;KURAMOTO MASARU |
分类号 |
H01S5/183;H01S5/042;H01S5/323 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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