METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING MULTILAYERED PLUG AND RELATED DEVICE

摘要

A semiconductor pattern is formed on a substrate. An interlayer insulating layer is formed on the semiconductor pattern. A contact hole in the interlayer insulating layer is formed the semiconductor pattern is exposed. A lower plug is formed in the contact hole by a selective epitaxial growth (SEG) process. An upper plug is formed in the contact hole on the lower plug by alternately and repeatedly performing a deposition process and an etching process.

主权项

1. A method of forming a semiconductor device, comprising:
forming a semiconductor pattern on a substrate; forming an interlayer insulating layer on the semiconductor pattern; forming a contact hole in the interlayer insulating layer exposing the semiconductor pattern; forming a lower plug in the contact hole by a selective epitaxial growth (SEG) process; and forming an upper plug in the contact hole on the lower plug by alternately and repeatedly performing a deposition process and an etching process.