LASER DIODE DEVICE AND METHOD OF MANUFACTURING LASER DIODE DEVICE

摘要

A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface.

主权项

1. A method of manufacturing a laser diode device, the method comprising:
preparing a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; forming an epitaxial layer on the semi-polar surface of the semiconductor substrate, the epitaxial layer including a light emitting layer of the laser diode device; etching the epitaxial layer to a predetermined depth thereof through a mask, and forming a ridge section in a shape of a stripe; forming a first electrode in a region corresponding to the ridge section before the forming of the ridge section, or forming the first electrode on a top surface of the ridge section after the forming of the ridge section; forming an insulating material layer on a surface of the epitaxial layer including a top surface of the first electrode; etching the insulating material layer, and thereby forming an insulating layer, the insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, and the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; forming a pad electrode, the pad electrode covering a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and forming a second electrode on a surface, of the semiconductor substrate, opposite to the semi-polar surface.