发明名称 |
ACCELERATED RELAXATION OF STRAIN-RELAXED EPITAXIAL BUFFERS BY USE OF INTEGRATED OR STAND-ALONE THERMAL PROCESSING |
摘要 |
Implementations of the present disclosure generally relate to methods and apparatus for forming a film on a substrate. More particularly, implementations of the present disclosure relate to methods and apparatus for heteroepitaxial growth of crystalline films. In one implementation, a method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate is provided. The method comprises epitaxially depositing a buffer layer over a dissimilar substrate, rapidly heating the buffer layer to relax the buffer layer, rapidly cooling the buffer layer and determining whether the buffer layer has achieved a desired thickness. |
申请公布号 |
US2015050753(A1) |
申请公布日期 |
2015.02.19 |
申请号 |
US201414461191 |
申请日期 |
2014.08.15 |
申请人 |
Applied Materials, Inc. |
发明人 |
SRINIVASAN Swaminathan T.;NOORI Atif M.;CARLSON David K. |
分类号 |
H01L21/66;H01L21/02 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate, comprising:
epitaxially depositing a buffer layer over a dissimilar substrate: rapidly heating the buffer layer to relax the buffer layer; rapidly cooling the buffer layer; and determining whether the buffer layer has achieved a desired thickness. |
地址 |
Santa Clara CA US |