| 摘要 |
<p>Uniform deposition of activator on the surface of a semiconductor, with consequent uniform diffusion into the material, is obtained by treating the semi-conductor with the pulsating flow of activator (or cpd. contng. it) and carrier gas. Pref. a magnetic valve is used to give a cycle of flow time/dead time of 2-4:1 at 0.5-1 HZ, and method is applied to deposition of B2O3 (from BCl3 and moist air) on Si.</p> |
