MULTI-PIXEL AVALANCHE PHOTODIODE

摘要

Semiconductor avalanche photo transistors and methods of manufacturing the same, operable for internal amplification of a photo signal and for use in detection of weak light signals, gamma rays and nuclear particles. The multi-pixel avalanche photo transistor devices can comprise a semiconductor layer, a plurality of semiconductor areas (pixels) forming a p-n-junction with the semiconductor layer, a common conductive grid separated from the semiconductor layer by a dielectric layer and individual micro-resistors connected said semiconductor areas with the common conductive grid. Systems and methods described can be operable to decrease optical crosstalk at high signal amplification and the special capacity of the multi-pixel avalanche photo transistor, as well as improve speed its photo response.

主权项

1. A multi-pixel avalanche photo transistor comprising:
a semiconductor layer; a plurality of semiconductor areas forming a p-n-junction with the said semiconductor layer; a common conductive grid separated from the said semiconductor layer by a dielectric layer; and individual micro-resistors connecting said semiconductor areas with the common conductive grid, distinguished by that on a part of a surface of said semiconductor areas, respective individual emitters form potential barriers with said semi-conductor areas, wherein the individual emitters are connected to an additional conductive grid by means of respective second individual micro-resistors.