发明名称 |
In2Te3 Precipitates in Bulk Bi2Te3 for Thermoelectric Applications |
摘要 |
The present invention teaches a successful synthesis regime to grow highly oriented plate-like In2Te3 nanostructures inside bulk thermoelectric Bi2Te3 using a thermodynamically driven nucleation and growth technique. As described herein, the inventive materials can further be doped with +2 and +4 rare earth elements, and others, in order to achieve the desired performance characteristics. |
申请公布号 |
US2015047683(A1) |
申请公布日期 |
2015.02.19 |
申请号 |
US201313871770 |
申请日期 |
2013.04.26 |
申请人 |
California Institute of Technology |
发明人 |
Snyder G. Jeffrey;Pei Yanzhong;Heinz Nicholas A. |
分类号 |
H01L35/16 |
主分类号 |
H01L35/16 |
代理机构 |
|
代理人 |
|
主权项 |
1. An article of manufacture comprising a matrix and embedded precipitates, wherein the matrix comprises Bi2Te3. |
地址 |
US |