发明名称 In2Te3 Precipitates in Bulk Bi2Te3 for Thermoelectric Applications
摘要 The present invention teaches a successful synthesis regime to grow highly oriented plate-like In2Te3 nanostructures inside bulk thermoelectric Bi2Te3 using a thermodynamically driven nucleation and growth technique. As described herein, the inventive materials can further be doped with +2 and +4 rare earth elements, and others, in order to achieve the desired performance characteristics.
申请公布号 US2015047683(A1) 申请公布日期 2015.02.19
申请号 US201313871770 申请日期 2013.04.26
申请人 California Institute of Technology 发明人 Snyder G. Jeffrey;Pei Yanzhong;Heinz Nicholas A.
分类号 H01L35/16 主分类号 H01L35/16
代理机构 代理人
主权项 1. An article of manufacture comprising a matrix and embedded precipitates, wherein the matrix comprises Bi2Te3.
地址 US