| 摘要 |
A method for cleaning a processing chamber, for example, a strip chamber, configured for processing a wafer is provided which includes the steps of introducing an oxygen-containing gas into the processing chamber, generating an oxygen plasma from the oxygen-containing gas in the processing chamber, establishing a pressure of the oxygen plasma in the processing chamber of at least 1 Torr and maintaining the pressure of at least 1 Torr for at least 40 seconds. A system is also provided including a strip chamber for receiving and stripping the wafer and including a gas inlet and plasma generator means, as well as a controller configured for performing, when no wafer is present in the strip chamber, controlling inflow of an oxygen-containing gas into the processing chamber through the gas inlet and controlling the plasma generator means to generate an oxygen plasma. |
