| 发明名称 |
SEMICONDUCTOR DEVICES WITH THROUGH VIA ELECTRODES, METHODS OF FABRICARING THE SAME, MEMORY CARDS INCLUDING THE SAME, AND ELECTRONIC SYSTEMS INCLUDING THE SAME |
| 摘要 |
A semiconductor device includes a via electrode penetrating a substrate and a back-side molding layer covering a back-side surface of the substrate. The back-side molding layer contacts a sidewall of a back-side end portion of the via electrode, which is a portion of the via electrode that protrudes from the back-side surface of the substrate. |
| 申请公布号 |
US2015048519(A1) |
申请公布日期 |
2015.02.19 |
| 申请号 |
US201414180327 |
申请日期 |
2014.02.13 |
| 申请人 |
SK HYNIX INC. |
发明人 |
PARK Jin Woo;LEE Sang Gyu |
| 分类号 |
H01L23/522;H01L23/00;H01L21/768 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first substrate; a first via electrode penetrating the first substrate and including a back-side end portion that protrudes from a back-side surface of the first substrate; and a first back-side molding layer covering the back-side surface of the first substrate and surrounding surfaces of a sidewall of the back-side end portion of the first via electrode. |
| 地址 |
Icheon KR |
