发明名称 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
摘要 Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.
申请公布号 US2015048405(A1) 申请公布日期 2015.02.19
申请号 US201414496490 申请日期 2014.09.25
申请人 LG Innotek Co., Ltd. 发明人 KIM Sung Kyoon;LIM Woo Sik;KIM Myeong Soo;CHOO Sung Ho;NA Min Gyu
分类号 H01L33/58;H01L33/38 主分类号 H01L33/58
代理机构 代理人
主权项 1. A light emitting device comprising: a transmissive substrate; a light emitting structure layer on the transmissive substrate, the light emitting structure layer comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a second electrode on a top surface of the light emitting structure layer and connected to the second conductive type semiconductor layer; a plurality of first electrodes disposed in the transmissive substrate and extended from a lower part of the transmissive substrate to a lower part of the first conductive type semiconductor layer, the plurality of first electrodes being disposed under a region of the active layer; and a first electrode layer disposed under the transmissive substrate and connected to the plurality of first electrodes, wherein the plurality of first electrodes are overlapped with different regions of the second electrode in a vertical direction and are connected to the first conductive type semiconductor layer, wherein a top surface of the transmissive substrate includes a first region and a second region which are vertically overlapped with the first electrode layer, wherein the first region is vertically overlapped with the light emitting structure layer, wherein the second region are not vertically overlapped with the light emitting structure layer, wherein the second region is located at an outer position than a first region.
地址 Seoul KR