| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid for CMP which makes possible to reduce the occurrence of polishing flaw in a face to be polished, and to achieve a high polishing speed and superior dispersion stability.SOLUTION: A polishing liquid for CMP comprises: polishing grains composed of aggregations which polishing material particles and cationic organic polymer particles form into with the aid of an anionic water-soluble polymer compound; and water. The polishing material particles each have a core-shell structure including a core layer and a shell layer. The core layer contains an oxide of at least one element selected from Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, In, Sn, Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, W, Bi, Th and alkali-earth metals. The shell layer contains a cerium oxide. |
