| 摘要 |
<p>A laterally double-diffused metal-oxide-semiconductor field effect transistor, comprising: a semiconductor substrate (200), located in a body area (201) for said semiconductor substrate (200); a drift region (204), located in said semiconductor substrate (200); a source region (205) and a body lead-out region (202) located in the body region (201) and separated from the drift region (204); a field region (208) and a drain region (206) located in the drift region (204); and a gate electrode located on the surface of the semiconductor substrate (200), partially covering the body region (201), the drift region (204) and the field region (208). The field region (208) and drain region (206) are separate one from the other by a certain distance. In the present semiconductor component, while the original dimensions of the drift region (204) remain unchanged, the dimensions of the field region (208) of the drift region (204) near the drain end are shortened, changing the drift region, which originally was wholly a field region, into one section of field region and one section of active region, thus reducing LDMOS on-resistance, while at the same time increasing on-state breakdown voltage.</p> |
