Integrated Circuit Features with Fine Line Space and Methods for Forming the Same

摘要

A method includes forming a hard mask over a base material, and forming an I-shaped first opening in the hard mask. The first opening includes two parallel portions and a connecting portion interconnecting the two parallel portions. Spacers are formed on sidewalls of the first opening. The spacers fill an entirety of the connecting portion, wherein a center portion of each of the two parallel portions is unfilled by the spacers. The hard mask is etched to remove a portion of the hard mask and to form a second opening, wherein the second opening is between the two parallel portions of the first opening. The second opening is spaced apart from the two parallel portions of the first opening by the spacers. The first opening and the second opening are then extended down into the base material.

主权项

1. A method comprising:
forming a first hard mask over a base material; forming a first opening in the first hard mask, wherein the first opening has an I-shape and comprises:
two parallel portions; anda connecting portion interconnecting the two parallel portions; forming spacers on sidewalls of the first opening, wherein the spacers fill an entirety of the connecting portion, and wherein a center portion of each of the two parallel portions is unfilled by the spacers; etching the first hard mask to remove a portion of the first hard mask and to form a second opening, wherein the second opening is between the two parallel portions of the first opening, and wherein the second opening is spaced apart from the two parallel portions of the first opening by the spacers; and extending the first opening and the second opening into the base material.