| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that unevenness of infiltration is generated under a semiconductor element, which causes generation of involvement voids, when a liquid thermosetting resin is injected after mounting the semiconductor element and a gap between the semiconductor element and a multilayer wiring substrate is sealed, in a method of manufacturing a semiconductor package in which the semiconductor element is connected by the face-down method via a projection electrode on a surface insulation layer of the multilayer wiring substrate consisting of a conductor layer and an insulation layer alternately laminated for at least one or more layers, and the liquid thermosetting resin is applied to the gap between the semiconductor element and the multilayer wiring substrate to seal the projection electrode. <P>SOLUTION: In a method of manufacturing a semiconductor package, a surface active process is performed ununiformly using plasma discharge at least to a region on a surface insulation layer where a semiconductor element is mounted. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
