| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate wherein a gallium nitride film can be formed from a simple single-crystal silicon substrate as a starting substrate, and warp and cracks are suppressed; and to provide a method for manufacturing the same. <P>SOLUTION: The semiconductor substrate 10 has a single crystal silicon substrate 11, a dislocation layer 12 formed in a surface region excluding the outermost surface of the single crystal silicon substrate 11, a buffer layer 13 formed on the outermost surface of the single crystal silicon substrate 11, and a gallium nitride layer 14 formed on the surface of the buffer layer 13. The dislocation layer 12 is formed under the condition that dislocation is generated in the surface region of the single crystal silicon substrate 11 where the gallium nitride layer 14 is formed and no dislocation is generated on the outermost surface of the single crystal silicon substrate 11. In ion implantation, argon ions of a dose amount of 5E+14 atoms/cm<SP POS="POST">2</SP>and 5E+17 atoms/cm<SP POS="POST">2</SP>are implanted. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
