| 摘要 |
<p>There is provided a chemical vapor deposition device (100, 200, 300) comprising: a support member (120, 220, 320) arranged to support a first surface of a substrate; a deposition head (160, 260, 360) arranged to supply deposition gas towards a second surface of the substrate, the second surface of the substrate being an opposite surface to the first surface of the substrate; a frame arranged around an edge portion of the support member (120, 220, 320), the frame having a purge gas supply port (131, 231, 331) arranged to supply purge gas from a location on a side of the substrate opposite to the deposition head (160, 260, 360), and at least one exhaust port (132, 232, 332) arranged around an edge portion of the support member (120, 220, 320); and a chamber (110, 210, 310) arranged to house the support member (120, 220, 320), deposition head (160, 260, 360), and the frame.</p> |
