Double-gate electronic memory cell and method of fabricating thereof

摘要

#CMT# #/CMT# The cell (100) has an active area formed in a semi-conductor layer (102) and provided with a channel between a source (110) and a drain (112). A gate (114) is provided on a part of the channel. A portion of a lateral spacer (133) is provided on the semi-conductor layer against a lateral flank of a block (111) distinct from the gate. The lateral spacer is connected with another lateral spacer (128), where the two spacers are made of same material. The portion of the former lateral spacer forms a part of an electrical contact pad (130) that is electrically connected to another gate (134). #CMT# : #/CMT# Independent claims are also included for the following: (1) a method for manufacturing a double-gate electronic memory cell (2) a method for manufacturing a memory device. #CMT#USE : #/CMT# Double-gate electronic memory cell for a memory device (claimed) e.g. non-volatile electronic memory device such as dual gate-flash type electronic memory device. #CMT#ADVANTAGE : #/CMT# The lateral spacer is connected with another lateral spacer, and the two lateral spacers are made of same material, so that the cell ensures electrical recontacting of each gate without any risk of short circuit between the gates, and avoids the need of accurate alignment of electrical contacts with respect to the gates of the memory cells. The cell is easy to implement. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic view of a double-gate electronic memory cell. 100 : Double-gate electronic memory cell 102 : Semi-conductor layer 110 : Source 111 : Block 112 : Drain 114, 134 : Gates 128, 133 : Lateral spacers 130 : Electrical contact pad.