发明名称 Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods
摘要 <p>A method of surface processing a substrate that enables deposit to be removed from a substrate so as to obtain a clean substrate. A substrate is cleaned with a liquid chemical. A deposit which is formed through the cleaning with liquid chemical is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The deposit that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.</p>
申请公布号 EP1696476(B1) 申请公布日期 2015.02.18
申请号 EP20060003683 申请日期 2006.02.23
申请人 TOKYO ELECTRON LIMITED 发明人 NISHIMURA, EIICHI;ORII, TAKEHIKO
分类号 H01L21/306;G03F7/42;H01L21/02;H01L21/67 主分类号 H01L21/306
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