发明名称 |
Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods |
摘要 |
<p>A method of surface processing a substrate that enables deposit to be removed from a substrate so as to obtain a clean substrate. A substrate is cleaned with a liquid chemical. A deposit which is formed through the cleaning with liquid chemical is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The deposit that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.</p> |
申请公布号 |
EP1696476(B1) |
申请公布日期 |
2015.02.18 |
申请号 |
EP20060003683 |
申请日期 |
2006.02.23 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
NISHIMURA, EIICHI;ORII, TAKEHIKO |
分类号 |
H01L21/306;G03F7/42;H01L21/02;H01L21/67 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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