Semiconductor devices and methods of manufacture

摘要

 A semiconductor layer 120, which may comprise silicon carbide, wherein the semiconductor layer comprises a first region 121 doped with a first dopant type. The method further includes implanting the semiconductor layer 120 with a second dopant type using a single implantation mask 130 and a substantially similar implantation dose 140 to form a second region 122 and a junction termination extension (JTE) 124 in the semiconductor layer, wherein the implantation dose is in a range from about 2 x 10¹³ cmˉ ² to about 12 x 10¹³ cmˉ ².  The device maybe a MOSFET or IGBT. The mask 130 may comprise a plurality of windows such that the doping concentration varies laterally in a direction away from a primary blocking junction.