| 摘要 |
A power semiconductor module (100) includes: an electrode plate (2) in which a body portion (2a) and an external connection terminal portion (2b) are integrally formed, and the body portion (2a) is arranged on the same flat surface; a semiconductor chip (1) mounted on one surface (mounting surface) (2c) of the body portion (2a); and a resin package (3) in which the other surface (heat dissipation surface) (2d) of the body portion (2a) is exposed, and the body portion (2a) of the electrode plate (2) and the semiconductor chip (1) are sealed with resin. The heat dissipation surface (2d) is the same surface as the bottom (3a) of the resin package (3); and consequently, heat dissipation properties and reliability are improved and a reduction in size can be achieved. |
