| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a temperature gradient of a semiconductor element and improve radiation performance of a semiconductor device. <P>SOLUTION: A semiconductor device comprises: an insulated gate bipolar transistor (IGBT) (semiconductor element) 11 mounted on an electrical circuit; a circuit pattern 21 that is formed on an electrical circuit 100 and electrically connected to the IGBT 11; and a connection layer 30 that is interposed between the IGBT 11 and the circuit pattern 21 and connects them electrically. The connection layer 30 includes a solder layer 32 mechanically bonding the IGBT 11 and the circuit pattern 21, and a diode 31 that is provided so as to face a part of the IGBT 11 of which the temperature becomes maximum during operation, and has a higher electrical resistance than that of the solder layer 32. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
